Fast response of InSb Schottky detector.
نویسندگان
چکیده
An InSb Schottky detector, fabricated from an undoped InSb wafer with Hall mobility which is higher than those of previously employed InSb wafers, was used for alpha particle detection. The output pulse of this InSb detector showed a very fast rise time, which was comparable with the output pulses of scintillation detectors.
منابع مشابه
Design and Fabrication of on Chip Microwave Pulse Power Detectors
Title of Dissertation: DESIGN AND FABRICATION OF ON CHIP MICROWAVE PULSE POWER DETECTORS Woochul Jeon, Doctor of Philosophy, 2005 Directed By: Professor John Melngailis Department of Electrical and Computer Engineering On-chip microwave pulse-power detectors are promising devices for many electrical systems of both military and commercial applications. Most research in microwave power detector ...
متن کاملDeformation Analysis of 128×128 Infrared Detector with Reticulated InSb Pixel Array
The reticulated InSb pixel array was successfully employed in the design of large format InSb infrared focal plane arrays (IRFPAs) detector, to remove the thermal strain accumulated in InSb IRFPAs with the thermal shock test. In order to explore the deformation rules in the InSb IRFPAs with reticulated InSb pixel array, in light of the proposed equivalent modeling, a three-dimensional modeling ...
متن کاملHigh spectral response of self-driven GaN-based detectors by controlling the contact barrier height
The GaN-based material system is well suited to application as a photodetector material for operation in the 200–365 nm wavelength range because of its tunable wide direct bandgap. In addition, photodetectors made using this material system also have the advantages of being solid-state and small in size, with good chemical and thermal stability, thereby saving energy in operation and having lon...
متن کاملAnalysis of Structural Stress in 8 8 InSb Array Detector
Based on viscoplastic Anand’s model, structural stress of 8 8 InSb array detector dependent on indium bump sizes is systemically researched by finite element method. For the detector with underfill, simulation results show that as the diameters of indium bump decrease from 36μm to 20μm in step of 2μm, the maximum stress existing in InSb chip first reduces sharply, then increases flatly, and rea...
متن کاملPerformance of a diamond x-ray sensor fabricated with metal-less graphitic contacts
We report the x-ray photocurrent response of a coplanar chemical vapor deposition diamond detector fabricated using a metal-less graphitic ohmic contact. Ion implantation of 70 keV boron ions to a dose of 2 1016 cm−2 was performed through a patterned photoresist to produce a coplanar graphitic contact structure. The device photocurrent showed a fast response to pulsed x-ray irradiation, and sho...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- The Review of scientific instruments
دوره 78 5 شماره
صفحات -
تاریخ انتشار 2007